Bridge the gap between TSV and traditional WLFO/FOWLP

Our award-winning Silicon Wafer Integrated Fan-out Technology (SWIFT®/HDFO) technology is designed to provide increased I/O and circuit density within a reduced footprint and profile for single and multi-die applications.

SWIFT®technology enables the creation of advanced 3D structures, addressing the need for increased IC integration in emerging mobile and networking applications. The distinctive characteristics of SWIFT®are due, in part, to the fine feature capabilities associated with this innovative wafer level packaging technique. This allows aggressivedesign rulesto be applied, compared to traditionalWLFOand laminate-based assemblies.

Unique SWIFT®features include:

  • Polymer dielectrics
  • Multi-die and large die capability
  • Large body package capability
  • Interconnect density down to 2/2 μm
  • Cu pillardie interconnect down to 30 μm pitch
  • 3D/Package-on-Packagecapability utilizing Through Mold Via (TMV®) or tall Cu pillars
  • Meets JEDEC MSL2a and MSL3 CLR and BLR requirements

Enabling Technologies For SWIFT®Packaging:

Key assembly technologies enable the creation of these distinctive SWIFT®features. Using stepper photo imaging equipment, 2/2 μm line/space features can be achieved, enabling very high-density die-to-die connections required for SoC partitioning and networking applications where2.5D TSVwould typically be used. Fine-pitch die micro bumps provide a high-density interconnect for advanced products, such as application processors and baseband devices. In addition, tall Cu pillars enable a high-density vertical interface for mounting advanced memory devices on the top of the SWIFT®structure.


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